Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SISH101DN-T1-GE3
Herstellerteilenummer | SISH101DN-T1-GE3 |
---|---|
Zukünftige Teilenummer | FT-SISH101DN-T1-GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
SISH101DN-T1-GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 16.9A (Ta), 35A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 7.2 mOhm @ 15A, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 102nC @ 10V |
Vgs (Max) | ±25V |
Eingangskapazität (Ciss) (Max) @ Vds | 3595pF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | 3.7W (Ta), 52W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PowerPAK® 1212-8SH |
Paket / fall | PowerPAK® 1212-8SH |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SISH101DN-T1-GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SISH101DN-T1-GE3-FT |
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