Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SISS08DN-T1-GE3
Herstellerteilenummer | SISS08DN-T1-GE3 |
---|---|
Zukünftige Teilenummer | FT-SISS08DN-T1-GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® Gen IV |
SISS08DN-T1-GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 25V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 53.9A (Ta), 195.5A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 1.23 mOhm @ 15A, 10V |
Vgs (th) (Max) @ Id | 2.2V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 82nC @ 10V |
Vgs (Max) | +20V, -16V |
Eingangskapazität (Ciss) (Max) @ Vds | 3670pF @ 12.5V |
FET-Funktion | - |
Verlustleistung (max.) | 5W (Ta), 65.7W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PowerPAK® 1212-8S |
Paket / fall | PowerPAK® 1212-8S |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SISS08DN-T1-GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SISS08DN-T1-GE3-FT |
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