Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / SIZ320DT-T1-GE3
Herstellerteilenummer | SIZ320DT-T1-GE3 |
---|---|
Zukünftige Teilenummer | FT-SIZ320DT-T1-GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | PowerPAIR®, TrenchFET® |
SIZ320DT-T1-GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | 2 N-Channel (Dual) |
FET-Funktion | Standard |
Drain-Source-Spannung (Vdss) | 25V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 30A (Tc), 40A (Tc) |
Rds On (Max) @ Id, Vgs | 8.3 mOhm @ 8A, 10V, 4.24 mOhm @ 10A, 10V |
Vgs (th) (Max) @ Id | 2.4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 8.9nC @ 4.5V, 11.9nC @ 4.5V |
Eingangskapazität (Ciss) (Max) @ Vds | 660pF @ 12.5V, 1370pF @ 12.5V |
Leistung max | 16.7W, 31W |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | 8-PowerWDFN |
Supplier Device Package | 8-Power33 (3x3) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SIZ320DT-T1-GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SIZ320DT-T1-GE3-FT |
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