Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / SIZ328DT-T1-GE3
Herstellerteilenummer | SIZ328DT-T1-GE3 |
---|---|
Zukünftige Teilenummer | FT-SIZ328DT-T1-GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® Gen IV |
SIZ328DT-T1-GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | 2 N-Channel (Dual) |
FET-Funktion | Standard |
Drain-Source-Spannung (Vdss) | 25V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc) |
Rds On (Max) @ Id, Vgs | 15 mOhm @ 5A, 10V, 10 mOhm @ 5A, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 6.9nC @ 10V, 11.3nC @ 10V |
Eingangskapazität (Ciss) (Max) @ Vds | 325pF @ 10V, 600pF @ 10V |
Leistung max | 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | 8-PowerWDFN |
Supplier Device Package | 8-Power33 (3x3) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SIZ328DT-T1-GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SIZ328DT-T1-GE3-FT |
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