Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / SIZF906DT-T1-GE3
Herstellerteilenummer | SIZF906DT-T1-GE3 |
---|---|
Zukünftige Teilenummer | FT-SIZF906DT-T1-GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® Gen IV |
SIZF906DT-T1-GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | 2 N-Channel (Dual) |
FET-Funktion | Standard |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 60A (Tc) |
Rds On (Max) @ Id, Vgs | 3.8 mOhm @ 15A, 10V, 1.17 mOhm @ 20A, 10V |
Vgs (th) (Max) @ Id | 2.2V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 22nC @ 4.5V, 92nC @ 4.5V |
Eingangskapazität (Ciss) (Max) @ Vds | 2000pF @ 15V, 8200pF @ 15V |
Leistung max | 38W (Tc), 83W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TA) |
Befestigungsart | Surface Mount |
Paket / fall | 8-PowerWDFN |
Supplier Device Package | 8-PowerPair® (6x5) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SIZF906DT-T1-GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SIZF906DT-T1-GE3-FT |
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