Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SPB77N06S2-12
Herstellerteilenummer | SPB77N06S2-12 |
---|---|
Zukünftige Teilenummer | FT-SPB77N06S2-12 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | OptiMOS™ |
SPB77N06S2-12 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 55V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 80A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 12 mOhm @ 38A, 10V |
Vgs (th) (Max) @ Id | 4V @ 93µA |
Gateladung (Qg) (Max) @ Vgs | 60nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 2350pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 158W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PG-TO263-3-2 |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SPB77N06S2-12 Gewicht | kontaktiere uns |
Ersatzteilnummer | SPB77N06S2-12-FT |
NP80N06PLG-E1B-AY
Renesas Electronics America
NP82N03PUG-E1-AY
Renesas Electronics America
NP82N04PDG-E1-AY
Renesas Electronics America
NP82N055PUG-E1-AY
Renesas Electronics America
NP83P04PDG-E1-AY
Renesas Electronics America
NP83P06PDG-E1-AY
Renesas Electronics America
NP84N075KUE-E1-AY
Renesas Electronics America
NP88N03KDG-E1-AY
Renesas Electronics America
NP88N055KUG-E1-AY
Renesas Electronics America
NP88N075KUE-E1-AY
Renesas Electronics America
XCV200-5FG256I
Xilinx Inc.
APA150-FGG256
Microsemi Corporation
M7A3P1000-FGG256I
Microsemi Corporation
A40MX04-1PL68
Microsemi Corporation
EP1M350F780C6
Intel
LCMXO2-2000HE-6FTG256C
Lattice Semiconductor Corporation
LFXP2-40E-6FN484I
Lattice Semiconductor Corporation
10AX066H1F34I1SG
Intel
EP1C6Q240C7N
Intel
EP1K100QC208-1GZ
Intel