Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SPB80N03S203GATMA1
Herstellerteilenummer | SPB80N03S203GATMA1 |
---|---|
Zukünftige Teilenummer | FT-SPB80N03S203GATMA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | OptiMOS™ |
SPB80N03S203GATMA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 80A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.1 mOhm @ 80A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 150nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 7020pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 300W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PG-TO263-3-2 |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SPB80N03S203GATMA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | SPB80N03S203GATMA1-FT |
NP82N04PDG-E1-AY
Renesas Electronics America
NP82N055PUG-E1-AY
Renesas Electronics America
NP83P04PDG-E1-AY
Renesas Electronics America
NP83P06PDG-E1-AY
Renesas Electronics America
NP84N075KUE-E1-AY
Renesas Electronics America
NP88N03KDG-E1-AY
Renesas Electronics America
NP88N055KUG-E1-AY
Renesas Electronics America
NP88N075KUE-E1-AY
Renesas Electronics America
NTB125N02R
ON Semiconductor
NTB125N02RG
ON Semiconductor
LCMXO1200E-5T144C
Lattice Semiconductor Corporation
A1020B-2PQ100C
Microsemi Corporation
XC6SLX9-2FT256I
Xilinx Inc.
A3PN125-1VQ100
Microsemi Corporation
EP2A15F672C7AA
Intel
EP3CLS70U484I7
Intel
5SGSED6K2F40C3N
Intel
EP4CE10E22C9L
Intel
LFE3-70E-8FN484I
Lattice Semiconductor Corporation
EP20K600EBC652-1X
Intel