Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SPB80N03S2L-04 G
Herstellerteilenummer | SPB80N03S2L-04 G |
---|---|
Zukünftige Teilenummer | FT-SPB80N03S2L-04 G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | OptiMOS™ |
SPB80N03S2L-04 G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 80A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 3.9 mOhm @ 80A, 10V |
Vgs (th) (Max) @ Id | 2V @ 130µA |
Gateladung (Qg) (Max) @ Vgs | 105nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 3900pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 188W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PG-TO263-3-2 |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SPB80N03S2L-04 G Gewicht | kontaktiere uns |
Ersatzteilnummer | SPB80N03S2L-04 G-FT |
NP84N075KUE-E1-AY
Renesas Electronics America
NP88N03KDG-E1-AY
Renesas Electronics America
NP88N055KUG-E1-AY
Renesas Electronics America
NP88N075KUE-E1-AY
Renesas Electronics America
NTB125N02R
ON Semiconductor
NTB125N02RG
ON Semiconductor
NTB125N02RT4
ON Semiconductor
NTB125N02RT4G
ON Semiconductor
NTB13N10
ON Semiconductor
NTB13N10G
ON Semiconductor
XC4005E-1PQ100C
Xilinx Inc.
XC6SLX100-L1CSG484I
Xilinx Inc.
A3PN060-1VQ100I
Microsemi Corporation
10AX048K2F35E2LG
Intel
EP4S100G5F45I3
Intel
A40MX02-PLG44
Microsemi Corporation
XC7A25T-2CPG238C
Xilinx Inc.
LFEC15E-4F484C
Lattice Semiconductor Corporation
5AGXBA3D6F31C6N
Intel
EP1S40F1508C6N
Intel