Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SQJA20EP-T1_GE3
Herstellerteilenummer | SQJA20EP-T1_GE3 |
---|---|
Zukünftige Teilenummer | FT-SQJA20EP-T1_GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101, TrenchFET® |
SQJA20EP-T1_GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 200V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 22.5A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 7.5V, 10V |
Rds On (Max) @ Id, Vgs | 50 mOhm @ 10A, 10V |
Vgs (th) (Max) @ Id | 3.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 27nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 1300pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 68W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PowerPAK® SO-8 |
Paket / fall | PowerPAK® SO-8 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SQJA20EP-T1_GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SQJA20EP-T1_GE3-FT |
SI7758DP-T1-GE3
Vishay Siliconix
SI7774DP-T1-GE3
Vishay Siliconix
SI7784DP-T1-GE3
Vishay Siliconix
SI7788DP-T1-GE3
Vishay Siliconix
SI7790DP-T1-GE3
Vishay Siliconix
SI7792DP-T1-GE3
Vishay Siliconix
SI7794DP-T1-GE3
Vishay Siliconix
SI7840BDP-T1-E3
Vishay Siliconix
SI7848DP-T1-E3
Vishay Siliconix
SI7850ADP-T1-GE3
Vishay Siliconix
XC2S200-5FGG456I
Xilinx Inc.
AX1000-2FGG484
Microsemi Corporation
LCMXO640E-5FTN256C
Lattice Semiconductor Corporation
EP1S20F672I7
Intel
XC7VX980T-1FFG1930C
Xilinx Inc.
A42MX16-PQG160I
Microsemi Corporation
LFE2-50E-6F484I
Lattice Semiconductor Corporation
LCMXO3L-2100C-5BG256I
Lattice Semiconductor Corporation
LFE3-35EA-7FN672I
Lattice Semiconductor Corporation
10AX057K4F40I3SG
Intel