Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / STH12N120K5-2
Herstellerteilenummer | STH12N120K5-2 |
---|---|
Zukünftige Teilenummer | FT-STH12N120K5-2 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | MDmesh™ K5 |
STH12N120K5-2 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 1200V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 12A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 690 mOhm @ 6A, 10V |
Vgs (th) (Max) @ Id | 5V @ 100µA |
Gateladung (Qg) (Max) @ Vgs | 44.2nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 1370pF @ 100V |
FET-Funktion | - |
Verlustleistung (max.) | 250W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | H2Pak-2 |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
STH12N120K5-2 Gewicht | kontaktiere uns |
Ersatzteilnummer | STH12N120K5-2-FT |
TSM080N03EPQ56 RLG
Taiwan Semiconductor Corporation
TSM080N03PQ56 RLG
Taiwan Semiconductor Corporation
TSM089N08LCR RLG
Taiwan Semiconductor Corporation
TSM110NB04CR RLG
Taiwan Semiconductor Corporation
TSM110NB04LCR RLG
Taiwan Semiconductor Corporation
TSM130NB06CR RLG
Taiwan Semiconductor Corporation
TSM130NB06LCR RLG
Taiwan Semiconductor Corporation
TSM150NB04CR RLG
Taiwan Semiconductor Corporation
TSM150NB04LCR RLG
Taiwan Semiconductor Corporation
TSM230N06PQ56 RLG
Taiwan Semiconductor Corporation
XCV1000E-8FG900C
Xilinx Inc.
LCMXO640C-4FTN256I
Lattice Semiconductor Corporation
LCMXO3L-9400C-5BG484I
Lattice Semiconductor Corporation
M1AGL250V2-VQ100
Microsemi Corporation
M1AGL250V5-VQG100
Microsemi Corporation
EP2S60F484C5
Intel
5SGXMA7K3F40C3
Intel
XC4020E-2HQ208I
Xilinx Inc.
5AGXMA7G4F35I5N
Intel
EPF8820QC160-4
Intel