Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / STH3N150-2
Herstellerteilenummer | STH3N150-2 |
---|---|
Zukünftige Teilenummer | FT-STH3N150-2 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | PowerMESH™ |
STH3N150-2 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 1500V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 2.5A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 9 Ohm @ 1.3A, 10V |
Vgs (th) (Max) @ Id | 5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 29.3nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 939pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 140W (Tc) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | H²PAK |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab) Variant |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
STH3N150-2 Gewicht | kontaktiere uns |
Ersatzteilnummer | STH3N150-2-FT |
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