Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / STP21NM60ND

| Herstellerteilenummer | STP21NM60ND |
|---|---|
| Zukünftige Teilenummer | FT-STP21NM60ND |
| SPQ / MOQ | kontaktiere uns |
| Verpackungsmaterial | Reel/Tray/Tube/Others |
| Serie | FDmesh™ II |
| STP21NM60ND Status (Lebenszyklus) | Auf Lager |
| Teilestatus | Obsolete |
| FET-Typ | N-Channel |
| Technologie | MOSFET (Metal Oxide) |
| Drain-Source-Spannung (Vdss) | 600V |
| Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 17A (Tc) |
| Antriebsspannung (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 220 mOhm @ 8.5A, 10V |
| Vgs (th) (Max) @ Id | 5V @ 250µA |
| Gateladung (Qg) (Max) @ Vgs | 60nC @ 10V |
| Vgs (Max) | ±25V |
| Eingangskapazität (Ciss) (Max) @ Vds | 1800pF @ 50V |
| FET-Funktion | - |
| Verlustleistung (max.) | 140W (Tc) |
| Betriebstemperatur | 150°C (TJ) |
| Befestigungsart | Through Hole |
| Supplier Device Package | TO-220AB |
| Paket / fall | TO-220-3 |
| Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
| STP21NM60ND Gewicht | kontaktiere uns |
| Ersatzteilnummer | STP21NM60ND-FT |

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