Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SUD35N10-26P-E3
Herstellerteilenummer | SUD35N10-26P-E3 |
---|---|
Zukünftige Teilenummer | FT-SUD35N10-26P-E3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
SUD35N10-26P-E3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 35A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 7V, 10V |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 12A, 10V |
Vgs (th) (Max) @ Id | 4.4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 47nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 2000pF @ 12V |
FET-Funktion | - |
Verlustleistung (max.) | 8.3W (Ta), 83W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | TO-252 |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SUD35N10-26P-E3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SUD35N10-26P-E3-FT |
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