Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SUD50N04-37P-T4-E3
Herstellerteilenummer | SUD50N04-37P-T4-E3 |
---|---|
Zukünftige Teilenummer | FT-SUD50N04-37P-T4-E3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
SUD50N04-37P-T4-E3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 40V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 5.4A (Ta), 8A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 37 mOhm @ 5A, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 20nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 640pF @ 20V |
FET-Funktion | - |
Verlustleistung (max.) | 2W (Ta), 10.8W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | TO-252, (D-Pak) |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SUD50N04-37P-T4-E3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SUD50N04-37P-T4-E3-FT |
SI8401DB-T1-E1
Vishay Siliconix
SI8401DB-T1-E3
Vishay Siliconix
SI8402DB-T1-E1
Vishay Siliconix
SI8404DB-T1-E1
Vishay Siliconix
SI8405DB-T1-E1
Vishay Siliconix
SI8405DB-T1-E3
Vishay Siliconix
SI8415DB-T1-E1
Vishay Siliconix
SI8424DB-T1-E1
Vishay Siliconix
SI8435DB-T1-E1
Vishay Siliconix
SI8473EDB-T1-E1
Vishay Siliconix
XC3S50A-4TQ144I
Xilinx Inc.
M1A3P400-FGG256
Microsemi Corporation
M1A3P250-2PQG208
Microsemi Corporation
EP3C40F484C7N
Intel
10M40SAE144I7G
Intel
5SGXEBBR1H43C2LN
Intel
LCMXO2-7000HE-4FG484C
Lattice Semiconductor Corporation
5CGXFC9C6F23I7N
Intel
EP20K200CB356C9
Intel
EPF8820AQC208-4AA
Intel