Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SUD50N10-34P-T4-E3
Herstellerteilenummer | SUD50N10-34P-T4-E3 |
---|---|
Zukünftige Teilenummer | FT-SUD50N10-34P-T4-E3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
SUD50N10-34P-T4-E3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 5.9A (Ta), 20A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 34 mOhm @ 7A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 30nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 1800pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 2.5W (Ta), 56W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | TO-252, (D-Pak) |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SUD50N10-34P-T4-E3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SUD50N10-34P-T4-E3-FT |
SI8415DB-T1-E1
Vishay Siliconix
SI8424DB-T1-E1
Vishay Siliconix
SI8435DB-T1-E1
Vishay Siliconix
SI8473EDB-T1-E1
Vishay Siliconix
SI8475EDB-T1-E1
Vishay Siliconix
SUD09P10-195-GE3
Vishay Siliconix
SUD19P06-60-GE3
Vishay Siliconix
SUD50P06-15-GE3
Vishay Siliconix
SUD50P08-25L-E3
Vishay Siliconix
SQD25N15-52_GE3
Vishay Siliconix
LCMXO2-640HC-4SG48C
Lattice Semiconductor Corporation
A54SX32A-1TQG144
Microsemi Corporation
XC6SLX75T-4FGG484C
Xilinx Inc.
A3P600L-1FGG484
Microsemi Corporation
MPF300T-FCG1152E
Microsemi Corporation
A40MX04-FPL68
Microsemi Corporation
AGLN250V5-VQ100I
Microsemi Corporation
5SGXMA7N2F45C3N
Intel
LFXP6E-3Q208C
Lattice Semiconductor Corporation
5SGSMD4H3F35C4N
Intel