Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SUM40N10-30-E3
Herstellerteilenummer | SUM40N10-30-E3 |
---|---|
Zukünftige Teilenummer | FT-SUM40N10-30-E3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
SUM40N10-30-E3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 40A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 30 mOhm @ 15A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 60nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 2400pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 3.75W (Ta), 107W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | TO-263 (D2Pak) |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SUM40N10-30-E3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SUM40N10-30-E3-FT |
SIR872ADP-T1-GE3
Vishay Siliconix
SIR872DP-T1-GE3
Vishay Siliconix
SIR873DP-T1-GE3
Vishay Siliconix
SIR874DP-T1-GE3
Vishay Siliconix
SIR876ADP-T1-GE3
Vishay Siliconix
SIR876DP-T1-GE3
Vishay Siliconix
SIR878ADP-T1-GE3
Vishay Siliconix
SIR878DP-T1-GE3
Vishay Siliconix
SIR880ADP-T1-GE3
Vishay Siliconix
SIR880DP-T1-GE3
Vishay Siliconix
LFXP3C-4T144I
Lattice Semiconductor Corporation
A54SX16-VQ100
Microsemi Corporation
EP4CE40F23C6N
Intel
10AX016C4U19I3SG
Intel
5SGSED6K2F40C2N
Intel
5CGXFC7B6M15I7N
Intel
EP4SGX530KH40C3NES
Intel
5SGXEA5K1F35I2N
Intel
XC6VLX365T-1FF1156I
Xilinx Inc.
LCMXO2-7000HE-6BG332C
Lattice Semiconductor Corporation