Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / TJ60S06M3L(T6L1,NQ
Herstellerteilenummer | TJ60S06M3L(T6L1,NQ |
---|---|
Zukünftige Teilenummer | FT-TJ60S06M3L(T6L1,NQ |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | U-MOSVI |
TJ60S06M3L(T6L1,NQ Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 60A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 11.2 mOhm @ 30A, 10V |
Vgs (th) (Max) @ Id | 3V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 156nC @ 10V |
Vgs (Max) | +10V, -20V |
Eingangskapazität (Ciss) (Max) @ Vds | 7760pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 100W (Tc) |
Betriebstemperatur | 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | DPAK+ |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
TJ60S06M3L(T6L1,NQ Gewicht | kontaktiere uns |
Ersatzteilnummer | TJ60S06M3L(T6L1,NQ-FT |
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