Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / TK10P60W,RVQ
Herstellerteilenummer | TK10P60W,RVQ |
---|---|
Zukünftige Teilenummer | FT-TK10P60W,RVQ |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | DTMOSIV |
TK10P60W,RVQ Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 600V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 9.7A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 430 mOhm @ 4.9A, 10V |
Vgs (th) (Max) @ Id | 3.7V @ 500µA |
Gateladung (Qg) (Max) @ Vgs | 20nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 700pF @ 300V |
FET-Funktion | Super Junction |
Verlustleistung (max.) | 80W (Tc) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | DPAK |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
TK10P60W,RVQ Gewicht | kontaktiere uns |
Ersatzteilnummer | TK10P60W,RVQ-FT |
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