Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / TK11P65W,RQ
Herstellerteilenummer | TK11P65W,RQ |
---|---|
Zukünftige Teilenummer | FT-TK11P65W,RQ |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | DTMOSIV |
TK11P65W,RQ Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 650V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 11.1A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 440 mOhm @ 5.5A, 10V |
Vgs (th) (Max) @ Id | 3.5V @ 450µA |
Gateladung (Qg) (Max) @ Vgs | 25nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 890pF @ 300V |
FET-Funktion | - |
Verlustleistung (max.) | 100W (Tc) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | DPAK |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
TK11P65W,RQ Gewicht | kontaktiere uns |
Ersatzteilnummer | TK11P65W,RQ-FT |
2SK3670(T6CANO,F,M
Toshiba Semiconductor and Storage
2SK3670,F(J
Toshiba Semiconductor and Storage
TK25N60X,S1F
Toshiba Semiconductor and Storage
TK62N60X,S1F
Toshiba Semiconductor and Storage
TK31N60X,S1F
Toshiba Semiconductor and Storage
TK040N65Z,S1F
Toshiba Semiconductor and Storage
TK39N60W,S1VF
Toshiba Semiconductor and Storage
TK28N65W,S1F
Toshiba Semiconductor and Storage
TK39N60X,S1F
Toshiba Semiconductor and Storage
TK14N65W,S1F
Toshiba Semiconductor and Storage
XC7A100T-2FTG256I
Xilinx Inc.
APA450-FGG484A
Microsemi Corporation
10AX032E4F27I3SG
Intel
XC6VHX380T-2FFG1154C
Xilinx Inc.
XC7K325T-L2FBG900I
Xilinx Inc.
LFXP3C-5Q208C
Lattice Semiconductor Corporation
LFXP2-5E-6MN132I
Lattice Semiconductor Corporation
10AX066N4F40I3LG
Intel
EP1AGX35DF780C6
Intel
EP1S40F1020C5N
Intel