Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / TK11P65W,RQ
Herstellerteilenummer | TK11P65W,RQ |
---|---|
Zukünftige Teilenummer | FT-TK11P65W,RQ |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | DTMOSIV |
TK11P65W,RQ Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 650V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 11.1A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 440 mOhm @ 5.5A, 10V |
Vgs (th) (Max) @ Id | 3.5V @ 450µA |
Gateladung (Qg) (Max) @ Vgs | 25nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 890pF @ 300V |
FET-Funktion | - |
Verlustleistung (max.) | 100W (Tc) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | DPAK |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
TK11P65W,RQ Gewicht | kontaktiere uns |
Ersatzteilnummer | TK11P65W,RQ-FT |
2SK3670(T6CANO,F,M
Toshiba Semiconductor and Storage
2SK3670,F(J
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