Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / TN0106N3-G-P013
Herstellerteilenummer | TN0106N3-G-P013 |
---|---|
Zukünftige Teilenummer | FT-TN0106N3-G-P013 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
TN0106N3-G-P013 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 350mA (Tj) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 3 Ohm @ 500mA, 10V |
Vgs (th) (Max) @ Id | 2V @ 500µA |
Gateladung (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 60pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 1W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-92-3 |
Paket / fall | TO-226-3, TO-92-3 (TO-226AA) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
TN0106N3-G-P013 Gewicht | kontaktiere uns |
Ersatzteilnummer | TN0106N3-G-P013-FT |
ZVNL120A
Diodes Incorporated
ZVN3320A
Diodes Incorporated
TN0702N3-G
Microchip Technology
VN2106N3-G
Microchip Technology
DN2540N3-G
Microchip Technology
TN0604N3-G
Microchip Technology
LND150N3-G-P003
Microchip Technology
VN0109N3-G
Microchip Technology
TN5325N3-G
Microchip Technology
VN0104N3-G
Microchip Technology
ICE40UL640-SWG16ITR50
Lattice Semiconductor Corporation
A54SX16P-VQ100M
Microsemi Corporation
AT40K05AL-1DQC
Microchip Technology
5SGXEA9N2F45I2N
Intel
ICE40LP640-CM36
Lattice Semiconductor Corporation
LFXP2-8E-5FTN256C
Lattice Semiconductor Corporation
LCMXO256E-3M100I
Lattice Semiconductor Corporation
LCMXO1200E-3MN132I
Lattice Semiconductor Corporation
EP3SL110F780C3N
Intel
EP3SL110F780I4
Intel