Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / TN0110N3-G-P002
Herstellerteilenummer | TN0110N3-G-P002 |
---|---|
Zukünftige Teilenummer | FT-TN0110N3-G-P002 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
TN0110N3-G-P002 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 350mA (Tj) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 3 Ohm @ 500mA, 10V |
Vgs (th) (Max) @ Id | 2V @ 500µA |
Gateladung (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 60pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 1W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-92-3 |
Paket / fall | TO-226-3, TO-92-3 (TO-226AA) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
TN0110N3-G-P002 Gewicht | kontaktiere uns |
Ersatzteilnummer | TN0110N3-G-P002-FT |
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