Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / TN2130K1-G
Herstellerteilenummer | TN2130K1-G |
---|---|
Zukünftige Teilenummer | FT-TN2130K1-G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
TN2130K1-G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 300V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 85mA (Tj) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V |
Rds On (Max) @ Id, Vgs | 25 Ohm @ 120mA, 4.5V |
Vgs (th) (Max) @ Id | 2.4V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 50pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 360mW (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | TO-236AB (SOT23) |
Paket / fall | TO-236-3, SC-59, SOT-23-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
TN2130K1-G Gewicht | kontaktiere uns |
Ersatzteilnummer | TN2130K1-G-FT |
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