Zuhause / Produkte / Sicherung / TVS - Dioden / TPD1E10B06DPYR
Herstellerteilenummer | TPD1E10B06DPYR |
---|---|
Zukünftige Teilenummer | FT-TPD1E10B06DPYR |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
TPD1E10B06DPYR Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Art | Zener |
Unidirektionale Kanäle | - |
Bidirektionale Kanäle | 1 |
Spannung - Reverse Standoff (Typ) | 5.5V (Max) |
Spannung - Durchschlag (min.) | 6V |
Spannung - Klemmung (max.) @ Ipp | 14V |
Strom - Spitzenimpuls (10 / 1000µs) | 5A (8/20µs) |
Leistung - Spitzenimpuls | 90W |
Stromleitungsschutz | No |
Anwendungen | General Purpose |
Kapazität bei Frequenz | - |
Betriebstemperatur | -40°C ~ 125°C (TA) |
Befestigungsart | Surface Mount |
Paket / fall | 0402 (1006 Metric) |
Supplier Device Package | 2-X1SON (1x.60) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
TPD1E10B06DPYR Gewicht | kontaktiere uns |
Ersatzteilnummer | TPD1E10B06DPYR-FT |
DF2S30CT,L3F
Toshiba Semiconductor and Storage
DF2S6M4CT,L3F
Toshiba Semiconductor and Storage
DF2B12M1CT(TPL3)
Toshiba Semiconductor and Storage
DF2B5M4CT,L3F
Toshiba Semiconductor and Storage
DF2S6.8UCT,L3F
Toshiba Semiconductor and Storage
DF2S8.2CT,L3F
Toshiba Semiconductor and Storage
DF2S24UCT,L3F
Toshiba Semiconductor and Storage
DF2S20CT,L3F
Toshiba Semiconductor and Storage
DF2S5.6CT,L3F
Toshiba Semiconductor and Storage
DF2S6.2CT,L3F
Toshiba Semiconductor and Storage
XC3S200A-4FG320I
Xilinx Inc.
A1010B-PLG68I
Microsemi Corporation
EP3SL340F1760I3
Intel
5SGXEA9K2H40I2
Intel
XC5VLX30-1FF676C
Xilinx Inc.
A54SX16A-TQG100I
Microsemi Corporation
LFE2M20SE-5FN256C
Lattice Semiconductor Corporation
LCMXO2280E-4B256C
Lattice Semiconductor Corporation
EP4CGX22CF19C7
Intel
EP20K1000CF33C8N
Intel