Zuhause / Produkte / Sicherung / TVS - Dioden / TPD1E10B09DPYR
Herstellerteilenummer | TPD1E10B09DPYR |
---|---|
Zukünftige Teilenummer | FT-TPD1E10B09DPYR |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
TPD1E10B09DPYR Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Art | Zener |
Unidirektionale Kanäle | - |
Bidirektionale Kanäle | 1 |
Spannung - Reverse Standoff (Typ) | 9V (Max) |
Spannung - Durchschlag (min.) | 9.5V |
Spannung - Klemmung (max.) @ Ipp | 20V |
Strom - Spitzenimpuls (10 / 1000µs) | 4.5A (8/20µs) |
Leistung - Spitzenimpuls | 90W |
Stromleitungsschutz | No |
Anwendungen | General Purpose |
Kapazität bei Frequenz | - |
Betriebstemperatur | -40°C ~ 125°C (TA) |
Befestigungsart | Surface Mount |
Paket / fall | 0402 (1006 Metric) |
Supplier Device Package | 2-X1SON (1x.60) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
TPD1E10B09DPYR Gewicht | kontaktiere uns |
Ersatzteilnummer | TPD1E10B09DPYR-FT |
DF2B5M4CT,L3F
Toshiba Semiconductor and Storage
DF2S6.8UCT,L3F
Toshiba Semiconductor and Storage
DF2S8.2CT,L3F
Toshiba Semiconductor and Storage
DF2S24UCT,L3F
Toshiba Semiconductor and Storage
DF2S20CT,L3F
Toshiba Semiconductor and Storage
DF2S5.6CT,L3F
Toshiba Semiconductor and Storage
DF2S6.2CT,L3F
Toshiba Semiconductor and Storage
DF2S6.8CT(TPL3)
Toshiba Semiconductor and Storage
DF2S6.8UCT(TPL3)
Toshiba Semiconductor and Storage
DF2S12FU,H3F
Toshiba Semiconductor and Storage
LCMXO2280E-5T100C
Lattice Semiconductor Corporation
XC3S50A-4FTG256I
Xilinx Inc.
XC3S400-4PQG208I
Xilinx Inc.
LCMXO1200E-3FT256I
Lattice Semiconductor Corporation
5SGXMA5N3F45I4N
Intel
5SGXMB6R1F43I2N
Intel
XA7S25-1CSGA225Q
Xilinx Inc.
LCMXO2280C-3M132C
Lattice Semiconductor Corporation
EP3SL70F780C4
Intel
EP2S60F1020C4N
Intel