Zuhause / Produkte / Sicherung / TVS - Dioden / TPD1E10B09DPYR
Herstellerteilenummer | TPD1E10B09DPYR |
---|---|
Zukünftige Teilenummer | FT-TPD1E10B09DPYR |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
TPD1E10B09DPYR Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Art | Zener |
Unidirektionale Kanäle | - |
Bidirektionale Kanäle | 1 |
Spannung - Reverse Standoff (Typ) | 9V (Max) |
Spannung - Durchschlag (min.) | 9.5V |
Spannung - Klemmung (max.) @ Ipp | 20V |
Strom - Spitzenimpuls (10 / 1000µs) | 4.5A (8/20µs) |
Leistung - Spitzenimpuls | 90W |
Stromleitungsschutz | No |
Anwendungen | General Purpose |
Kapazität bei Frequenz | - |
Betriebstemperatur | -40°C ~ 125°C (TA) |
Befestigungsart | Surface Mount |
Paket / fall | 0402 (1006 Metric) |
Supplier Device Package | 2-X1SON (1x.60) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
TPD1E10B09DPYR Gewicht | kontaktiere uns |
Ersatzteilnummer | TPD1E10B09DPYR-FT |
DF2B5M4CT,L3F
Toshiba Semiconductor and Storage
DF2S6.8UCT,L3F
Toshiba Semiconductor and Storage
DF2S8.2CT,L3F
Toshiba Semiconductor and Storage
DF2S24UCT,L3F
Toshiba Semiconductor and Storage
DF2S20CT,L3F
Toshiba Semiconductor and Storage
DF2S5.6CT,L3F
Toshiba Semiconductor and Storage
DF2S6.2CT,L3F
Toshiba Semiconductor and Storage
DF2S6.8CT(TPL3)
Toshiba Semiconductor and Storage
DF2S6.8UCT(TPL3)
Toshiba Semiconductor and Storage
DF2S12FU,H3F
Toshiba Semiconductor and Storage
LFXP3E-3TN144C
Lattice Semiconductor Corporation
XC3S400AN-5FTG256C
Xilinx Inc.
A3PN030-Z1VQ100
Microsemi Corporation
5CGTFD7D5F27I7N
Intel
XC2VP50-5FFG1152C
Xilinx Inc.
XC2VP7-6FF896I
Xilinx Inc.
A54SX32A-TQ100I
Microsemi Corporation
LFE3-150EA-6LFN1156I
Lattice Semiconductor Corporation
EP20K160EQC240-3N
Intel
EP4SGX110HF35I4
Intel