Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / TPD3215M
Herstellerteilenummer | TPD3215M |
---|---|
Zukünftige Teilenummer | FT-TPD3215M |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
TPD3215M Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | 2 N-Channel (Half Bridge) |
FET-Funktion | GaNFET (Gallium Nitride) |
Drain-Source-Spannung (Vdss) | 600V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 70A (Tc) |
Rds On (Max) @ Id, Vgs | 34 mOhm @ 30A, 8V |
Vgs (th) (Max) @ Id | - |
Gateladung (Qg) (Max) @ Vgs | 28nC @ 8V |
Eingangskapazität (Ciss) (Max) @ Vds | 2260pF @ 100V |
Leistung max | 470W |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Paket / fall | Module |
Supplier Device Package | Module |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
TPD3215M Gewicht | kontaktiere uns |
Ersatzteilnummer | TPD3215M-FT |
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