Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / TPN11006NL,LQ
Herstellerteilenummer | TPN11006NL,LQ |
---|---|
Zukünftige Teilenummer | FT-TPN11006NL,LQ |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | U-MOSVIII-H |
TPN11006NL,LQ Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 17A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 11.4 mOhm @ 8.5A, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 200µA |
Gateladung (Qg) (Max) @ Vgs | 23nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 2000pF @ 30V |
FET-Funktion | - |
Verlustleistung (max.) | 700mW (Ta), 30W (Tc) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 8-TSON Advance (3.3x3.3) |
Paket / fall | 8-PowerVDFN |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
TPN11006NL,LQ Gewicht | kontaktiere uns |
Ersatzteilnummer | TPN11006NL,LQ-FT |
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