Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / TPS1120DR
Herstellerteilenummer | TPS1120DR |
---|---|
Zukünftige Teilenummer | FT-TPS1120DR |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
TPS1120DR Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | 2 P-Channel (Dual) |
FET-Funktion | Logic Level Gate |
Drain-Source-Spannung (Vdss) | 15V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 1.17A |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 1.5A, 10V |
Vgs (th) (Max) @ Id | 1.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 5.45nC @ 10V |
Eingangskapazität (Ciss) (Max) @ Vds | - |
Leistung max | 840mW |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SOIC |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
TPS1120DR Gewicht | kontaktiere uns |
Ersatzteilnummer | TPS1120DR-FT |
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