Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / TSM60NB190CM2 RNG
Herstellerteilenummer | TSM60NB190CM2 RNG |
---|---|
Zukünftige Teilenummer | FT-TSM60NB190CM2 RNG |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
TSM60NB190CM2 RNG Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 600V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 18A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 6A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 31nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 1273pF @ 100V |
FET-Funktion | - |
Verlustleistung (max.) | 150.6W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | TO-263 (D²Pak) |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
TSM60NB190CM2 RNG Gewicht | kontaktiere uns |
Ersatzteilnummer | TSM60NB190CM2 RNG-FT |
TSM60NB1R4CH C5G
Taiwan Semiconductor Corporation
TSM4NB65CH C5G
Taiwan Semiconductor Corporation
TSM60NB900CH C5G
Taiwan Semiconductor Corporation
TSM60NB600CH C5G
Taiwan Semiconductor Corporation
TSM70N1R4CH C5G
Taiwan Semiconductor Corporation
TSM70N900CH C5G
Taiwan Semiconductor Corporation
TSM60NB380CH C5G
Taiwan Semiconductor Corporation
TSM3N80CH C5G
Taiwan Semiconductor Corporation
TSM4NB60CH C5G
Taiwan Semiconductor Corporation
TSM80N950CH C5G
Taiwan Semiconductor Corporation
A3P1000L-FG484
Microsemi Corporation
M1A3P600L-FGG484
Microsemi Corporation
A54SX32A-CQ256B
Microsemi Corporation
5SEEBF45C3N
Intel
5SGXEABN2F45I2N
Intel
XC6SLX45-N3CSG324C
Xilinx Inc.
XC6SLX45T-N3CSG324C
Xilinx Inc.
LFE2M20SE-7F484C
Lattice Semiconductor Corporation
10AX090N4F40I3LG
Intel
EP2C20Q240C8N
Intel