Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - Gleichrichter - Single / UH3BHE3_A/I
Herstellerteilenummer | UH3BHE3_A/I |
---|---|
Zukünftige Teilenummer | FT-UH3BHE3_A/I |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
UH3BHE3_A/I Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Diodentyp | Standard |
Spannung - DC-Rückwärtsgang (Vr) (max.) | 100V |
Strom - Durchschnitt gleichgerichtet (Io) | 3A |
Spannung - Vorwärts (Vf) (Max) @ If | 1.05V @ 3A |
Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 40ns |
Strom - Rückwärtsleckage @ Vr | 5µA @ 100V |
Kapazität @ Vr, F | - |
Befestigungsart | Surface Mount |
Paket / fall | DO-214AB, SMC |
Supplier Device Package | DO-214AB (SMC) |
Betriebstemperatur - Übergang | -55°C ~ 175°C |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
UH3BHE3_A/I Gewicht | kontaktiere uns |
Ersatzteilnummer | UH3BHE3_A/I-FT |
RS3DHE3/9AT
Vishay Semiconductor Diodes Division
RS3G/7T
Vishay Semiconductor Diodes Division
RS3GHE3/57T
Vishay Semiconductor Diodes Division
RS3GHE3/9AT
Vishay Semiconductor Diodes Division
RS3JHE3/57T
Vishay Semiconductor Diodes Division
RS3JHE3/9AT
Vishay Semiconductor Diodes Division
RS3KHE3/57T
Vishay Semiconductor Diodes Division
RS3KHE3/9AT
Vishay Semiconductor Diodes Division
S3AHE3/57T
Vishay Semiconductor Diodes Division
S3AHE3/9AT
Vishay Semiconductor Diodes Division
A3P400-1FG484I
Microsemi Corporation
M1A3P1000-FGG256
Microsemi Corporation
10M50DCF256C7G
Intel
5SGXEA7N2F40C2N
Intel
EP3SE260H780I3
Intel
XC7V585T-1FF1761I
Xilinx Inc.
M1A3P1000L-1FGG144I
Microsemi Corporation
LFE2-20E-7FN256C
Lattice Semiconductor Corporation
EP3C25F324C6
Intel
5SGXEA3H1F35C2N
Intel