Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / UPA2816T1S-E2-AT
Herstellerteilenummer | UPA2816T1S-E2-AT |
---|---|
Zukünftige Teilenummer | FT-UPA2816T1S-E2-AT |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
UPA2816T1S-E2-AT Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 17A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 15.5 mOhm @ 17A, 10V |
Vgs (th) (Max) @ Id | - |
Gateladung (Qg) (Max) @ Vgs | 33.4nC @ 10V |
Vgs (Max) | +20V, -25V |
Eingangskapazität (Ciss) (Max) @ Vds | 1160pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 1.5W (Ta) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 8-HWSON (3.3x3.3) |
Paket / fall | 8-PowerWDFN |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
UPA2816T1S-E2-AT Gewicht | kontaktiere uns |
Ersatzteilnummer | UPA2816T1S-E2-AT-FT |
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