Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - Gleichrichter - Single / VS-MBR10T100
Herstellerteilenummer | VS-MBR10T100 |
---|---|
Zukünftige Teilenummer | FT-VS-MBR10T100 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
VS-MBR10T100 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Diodentyp | Schottky |
Spannung - DC-Rückwärtsgang (Vr) (max.) | 100V |
Strom - Durchschnitt gleichgerichtet (Io) | 10A |
Spannung - Vorwärts (Vf) (Max) @ If | 790mV @ 10A |
Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Strom - Rückwärtsleckage @ Vr | 100µA @ 100V |
Kapazität @ Vr, F | 400pF @ 5V, 1MHz |
Befestigungsart | Through Hole |
Paket / fall | TO-220-2 |
Supplier Device Package | TO-220AC |
Betriebstemperatur - Übergang | -55°C ~ 175°C |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
VS-MBR10T100 Gewicht | kontaktiere uns |
Ersatzteilnummer | VS-MBR10T100-FT |
MBR16H60-E3/45
Vishay Semiconductor Diodes Division
MBR16H60HE3/45
Vishay Semiconductor Diodes Division
MBR750-E3/45
Vishay Semiconductor Diodes Division
MBR750HE3/45
Vishay Semiconductor Diodes Division
MBR760/45
Vishay Semiconductor Diodes Division
MBR760HE3/45
Vishay Semiconductor Diodes Division
MBR7H35-E3/45
Vishay Semiconductor Diodes Division
MBR7H35HE3/45
Vishay Semiconductor Diodes Division
MBR7H45-E3/45
Vishay Semiconductor Diodes Division
MBR7H45HE3/45
Vishay Semiconductor Diodes Division
XC7S100-1FGGA484C
Xilinx Inc.
M1A3P1000-2FG256
Microsemi Corporation
LFE2M70E-6F1152C
Lattice Semiconductor Corporation
AT6003-2AI
Microchip Technology
EP1S20F484I6N
Intel
XC2VP40-6FFG1152C
Xilinx Inc.
AT6003-2JC
Microchip Technology
10AX115S2F45I2LG
Intel
EPF10K100ABC356-3
Intel
EP1C12F324C6
Intel