Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / 2SJ661-DL-1E
Herstellerteilenummer | 2SJ661-DL-1E |
---|---|
Zukünftige Teilenummer | FT-2SJ661-DL-1E |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
2SJ661-DL-1E Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 38A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4V, 10V |
Rds On (Max) @ Id, Vgs | 39 mOhm @ 19A, 10V |
Vgs (th) (Max) @ Id | - |
Gateladung (Qg) (Max) @ Vgs | 80nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 4360pF @ 20V |
FET-Funktion | - |
Verlustleistung (max.) | 1.65W (Ta), 65W (Tc) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | TO-263-2 |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
2SJ661-DL-1E Gewicht | kontaktiere uns |
Ersatzteilnummer | 2SJ661-DL-1E-FT |
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