Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / AOWF8N50
Herstellerteilenummer | AOWF8N50 |
---|---|
Zukünftige Teilenummer | FT-AOWF8N50 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
AOWF8N50 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 500V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 8A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 850 mOhm @ 4A, 10V |
Vgs (th) (Max) @ Id | 4.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 28nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 1042pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 27.8W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-262F |
Paket / fall | TO-262-3 Full Pack, I²Pak |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
AOWF8N50 Gewicht | kontaktiere uns |
Ersatzteilnummer | AOWF8N50-FT |
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