Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / AOWF9N70
Herstellerteilenummer | AOWF9N70 |
---|---|
Zukünftige Teilenummer | FT-AOWF9N70 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
AOWF9N70 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 700V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 9A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 4.5A, 10V |
Vgs (th) (Max) @ Id | 4.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 35nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 1630pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 28W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | - |
Paket / fall | TO-262-3 Full Pack, I²Pak |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
AOWF9N70 Gewicht | kontaktiere uns |
Ersatzteilnummer | AOWF9N70-FT |
DMN4060SVT-7
Diodes Incorporated
DMN6040SVTQ-7
Diodes Incorporated
DMN1019UVT-7
Diodes Incorporated
DMN10H170SVTQ-7
Diodes Incorporated
DMP3050LVT-7
Diodes Incorporated
DMN10H220LVT-7
Diodes Incorporated
DMP3105LVT-7
Diodes Incorporated
DMN1019UVT-13
Diodes Incorporated
DMN10H170SVT-13
Diodes Incorporated
DMN10H170SVTQ-13
Diodes Incorporated
A1020B-VQG80I
Microsemi Corporation
XC6VLX75T-L1FFG484I
Xilinx Inc.
APA1000-BG456M
Microsemi Corporation
AGLN125V2-VQ100I
Microsemi Corporation
EP4CE75F23C8L
Intel
XC5VLX50-3FF676C
Xilinx Inc.
AGL060V2-CS121
Microsemi Corporation
EP20K400ERC240-1
Intel
EPF10K10QI208-4
Intel
EPF10K30AQC208-3N
Intel