Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / APT19M120J
Herstellerteilenummer | APT19M120J |
---|---|
Zukünftige Teilenummer | FT-APT19M120J |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | POWER MOS 8™ |
APT19M120J Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 1200V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 19A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 530 mOhm @ 14A, 10V |
Vgs (th) (Max) @ Id | 5V @ 2.5mA |
Gateladung (Qg) (Max) @ Vgs | 300nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 9670pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 545W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Chassis Mount |
Supplier Device Package | ISOTOP® |
Paket / fall | SOT-227-4, miniBLOC |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
APT19M120J Gewicht | kontaktiere uns |
Ersatzteilnummer | APT19M120J-FT |
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