Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / APTM100DDA35T3G
Herstellerteilenummer | APTM100DDA35T3G |
---|---|
Zukünftige Teilenummer | FT-APTM100DDA35T3G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
APTM100DDA35T3G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | 2 N-Channel (Dual) |
FET-Funktion | Standard |
Drain-Source-Spannung (Vdss) | 1000V (1kV) |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 22A |
Rds On (Max) @ Id, Vgs | 420 mOhm @ 11A, 10V |
Vgs (th) (Max) @ Id | 5V @ 2.5mA |
Gateladung (Qg) (Max) @ Vgs | 186nC @ 10V |
Eingangskapazität (Ciss) (Max) @ Vds | 5200pF @ 25V |
Leistung max | 390W |
Betriebstemperatur | -40°C ~ 150°C (TJ) |
Befestigungsart | Chassis Mount |
Paket / fall | SP3 |
Supplier Device Package | SP3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
APTM100DDA35T3G Gewicht | kontaktiere uns |
Ersatzteilnummer | APTM100DDA35T3G-FT |
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