Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / AUIRLR120N

| Herstellerteilenummer | AUIRLR120N |
|---|---|
| Zukünftige Teilenummer | FT-AUIRLR120N |
| SPQ / MOQ | kontaktiere uns |
| Verpackungsmaterial | Reel/Tray/Tube/Others |
| Serie | HEXFET® |
| AUIRLR120N Status (Lebenszyklus) | Auf Lager |
| Teilestatus | Discontinued at Future Semiconductor |
| FET-Typ | N-Channel |
| Technologie | MOSFET (Metal Oxide) |
| Drain-Source-Spannung (Vdss) | 100V |
| Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 10A (Tc) |
| Antriebsspannung (Max Rds On, Min Rds On) | 4V, 10V |
| Rds On (Max) @ Id, Vgs | 185 mOhm @ 6A, 10V |
| Vgs (th) (Max) @ Id | 2V @ 250µA |
| Gateladung (Qg) (Max) @ Vgs | 20nC @ 5V |
| Vgs (Max) | ±16V |
| Eingangskapazität (Ciss) (Max) @ Vds | 440pF @ 25V |
| FET-Funktion | - |
| Verlustleistung (max.) | 48W (Tc) |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
| Befestigungsart | Surface Mount |
| Supplier Device Package | D-PAK (TO-252AA) |
| Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
| AUIRLR120N Gewicht | kontaktiere uns |
| Ersatzteilnummer | AUIRLR120N-FT |

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