Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / BSM180C12P2E202
Herstellerteilenummer | BSM180C12P2E202 |
---|---|
Zukünftige Teilenummer | FT-BSM180C12P2E202 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
BSM180C12P2E202 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | SiC (Silicon Carbide Junction Transistor) |
Drain-Source-Spannung (Vdss) | 1200V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 204A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | - |
Rds On (Max) @ Id, Vgs | - |
Vgs (th) (Max) @ Id | 4V @ 35.2mA |
Gateladung (Qg) (Max) @ Vgs | - |
Vgs (Max) | +22V, -6V |
Eingangskapazität (Ciss) (Max) @ Vds | 20000pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 1360W (Tc) |
Betriebstemperatur | 175°C (TJ) |
Befestigungsart | Chassis Mount |
Supplier Device Package | Module |
Paket / fall | Module |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSM180C12P2E202 Gewicht | kontaktiere uns |
Ersatzteilnummer | BSM180C12P2E202-FT |
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