Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / BSO130P03SHXUMA1
Herstellerteilenummer | BSO130P03SHXUMA1 |
---|---|
Zukünftige Teilenummer | FT-BSO130P03SHXUMA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | OptiMOS™ |
BSO130P03SHXUMA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 9.2A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 13 mOhm @ 11.7A, 10V |
Vgs (th) (Max) @ Id | 2.2V @ 140µA |
Gateladung (Qg) (Max) @ Vgs | 81nC @ 10V |
Vgs (Max) | ±25V |
Eingangskapazität (Ciss) (Max) @ Vds | 3520pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 1.56W (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | P-DSO-8 |
Paket / fall | 8-SOIC (0.154", 3.90mm Width) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSO130P03SHXUMA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | BSO130P03SHXUMA1-FT |
SPP10N10
Infineon Technologies
SPP10N10L
Infineon Technologies
SPP11N60C3XKSA1
Infineon Technologies
SPP11N60CFDHKSA1
Infineon Technologies
SPP11N60CFDXKSA1
Infineon Technologies
SPP11N60S5HKSA1
Infineon Technologies
SPP11N65C3XKSA1
Infineon Technologies
SPP11N80C3XKSA1
Infineon Technologies
SPP12N50C3HKSA1
Infineon Technologies
SPP15N60C3XKSA1
Infineon Technologies
XCV200-5FG256I
Xilinx Inc.
APA150-FGG256
Microsemi Corporation
M7A3P1000-FGG256I
Microsemi Corporation
A40MX04-1PL68
Microsemi Corporation
EP1M350F780C6
Intel
LCMXO2-2000HE-6FTG256C
Lattice Semiconductor Corporation
LFXP2-40E-6FN484I
Lattice Semiconductor Corporation
10AX066H1F34I1SG
Intel
EP1C6Q240C7N
Intel
EP1K100QC208-1GZ
Intel