Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / BSS314PEL6327HTSA1
Herstellerteilenummer | BSS314PEL6327HTSA1 |
---|---|
Zukünftige Teilenummer | FT-BSS314PEL6327HTSA1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | OptiMOS™ |
BSS314PEL6327HTSA1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 1.5A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 140 mOhm @ 1.5A, 10V |
Vgs (th) (Max) @ Id | 2V @ 6.3µA |
Gateladung (Qg) (Max) @ Vgs | 2.9nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 294pF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | 500mW (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | SOT-23-3 |
Paket / fall | TO-236-3, SC-59, SOT-23-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSS314PEL6327HTSA1 Gewicht | kontaktiere uns |
Ersatzteilnummer | BSS314PEL6327HTSA1-FT |
2SJ305TE85LF
Toshiba Semiconductor and Storage
2SK2009TE85LF
Toshiba Semiconductor and Storage
BSS7728NH6327XTSA2
Infineon Technologies
FDN361BN
ON Semiconductor
NDS0610
ON Semiconductor
NDS356AP
ON Semiconductor
SI2314EDS-T1-GE3
Vishay Siliconix
FDN327N
ON Semiconductor
FDN339AN
ON Semiconductor
FDN302P
ON Semiconductor
A40MX02-VQG80M
Microsemi Corporation
EX128-PTQG64
Microsemi Corporation
5SGXEA7N1F40C2
Intel
EP4SGX530KF43C3
Intel
A40MX04-3PLG44
Microsemi Corporation
XC5VLX220T-1FFG1738I
Xilinx Inc.
LFEC6E-5F256C
Lattice Semiconductor Corporation
EPF10K50SBC356-2
Intel
EP20K60EFC324-1
Intel
EP2S60F1020C5
Intel