Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / BSS816NW L6327
Herstellerteilenummer | BSS816NW L6327 |
---|---|
Zukünftige Teilenummer | FT-BSS816NW L6327 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | OptiMOS™ |
BSS816NW L6327 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 1.4A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 1.8V, 2.5V |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 1.4A, 2.5V |
Vgs (th) (Max) @ Id | 750mV @ 3.7µA |
Gateladung (Qg) (Max) @ Vgs | 0.6nC @ 2.5V |
Vgs (Max) | ±8V |
Eingangskapazität (Ciss) (Max) @ Vds | 180pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 500mW (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PG-SOT323-3 |
Paket / fall | SC-70, SOT-323 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSS816NW L6327 Gewicht | kontaktiere uns |
Ersatzteilnummer | BSS816NW L6327-FT |
BSL207SP
Infineon Technologies
BSL207SPH6327XTSA1
Infineon Technologies
BSL207SPL6327HTSA1
Infineon Technologies
BSL211SP
Infineon Technologies
BSL211SPL6327HTSA1
Infineon Technologies
BSL211SPT
Infineon Technologies
BSL296SNH6327XTSA1
Infineon Technologies
BSL302SNH6327XTSA1
Infineon Technologies
BSL302SNL6327HTSA1
Infineon Technologies
BSL303SPEH6327XTSA1
Infineon Technologies
XC6SLX150-3FG676I
Xilinx Inc.
XC3S1400A-5FG484C
Xilinx Inc.
AGL600V5-FG484I
Microsemi Corporation
LAXP2-8E-5FTN256E
Lattice Semiconductor Corporation
LCMXO2-1200HC-5SG32C
Lattice Semiconductor Corporation
A40MX04-3PL68I
Microsemi Corporation
5SGSED8N2F45I2
Intel
5SGXEBBR2H43I3L
Intel
LFEC10E-3F256C
Lattice Semiconductor Corporation
EPF10K10QC208-3N
Intel