Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / BSS87E6327T
Herstellerteilenummer | BSS87E6327T |
---|---|
Zukünftige Teilenummer | FT-BSS87E6327T |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | SIPMOS® |
BSS87E6327T Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 240V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 260mA (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 6 Ohm @ 260mA, 10V |
Vgs (th) (Max) @ Id | 1.8V @ 108µA |
Gateladung (Qg) (Max) @ Vgs | 5.5nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 97pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 1W (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PG-SOT89-4-2 |
Paket / fall | TO-243AA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSS87E6327T Gewicht | kontaktiere uns |
Ersatzteilnummer | BSS87E6327T-FT |
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