Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / BSV236SP L6327
Herstellerteilenummer | BSV236SP L6327 |
---|---|
Zukünftige Teilenummer | FT-BSV236SP L6327 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | OptiMOS™ |
BSV236SP L6327 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 1.5A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 175 mOhm @ 1.5A, 4.5V |
Vgs (th) (Max) @ Id | 1.2V @ 8µA |
Gateladung (Qg) (Max) @ Vgs | 5.7nC @ 4.5V |
Vgs (Max) | ±12V |
Eingangskapazität (Ciss) (Max) @ Vds | 228pF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | 560mW (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PG-SOT363-6 |
Paket / fall | 6-VSSOP, SC-88, SOT-363 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSV236SP L6327 Gewicht | kontaktiere uns |
Ersatzteilnummer | BSV236SP L6327-FT |
IPP90R500C3
Infineon Technologies
IPP90R500C3XKSA1
Infineon Technologies
SPP02N60C3HKSA1
Infineon Technologies
SPP02N60S5HKSA1
Infineon Technologies
SPP02N80C3XKSA1
Infineon Technologies
SPP03N60C3HKSA1
Infineon Technologies
SPP03N60S5HKSA1
Infineon Technologies
SPP04N50C3HKSA1
Infineon Technologies
SPP04N60C3HKSA1
Infineon Technologies
SPP04N60C3XKSA1
Infineon Technologies
A1020B-VQG80I
Microsemi Corporation
XC6VLX75T-L1FFG484I
Xilinx Inc.
APA1000-BG456M
Microsemi Corporation
AGLN125V2-VQ100I
Microsemi Corporation
EP4CE75F23C8L
Intel
XC5VLX50-3FF676C
Xilinx Inc.
AGL060V2-CS121
Microsemi Corporation
EP20K400ERC240-1
Intel
EPF10K10QI208-4
Intel
EPF10K30AQC208-3N
Intel