Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / BUK7E1R8-40E,127
Herstellerteilenummer | BUK7E1R8-40E,127 |
---|---|
Zukünftige Teilenummer | FT-BUK7E1R8-40E,127 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101, TrenchMOS™ |
BUK7E1R8-40E,127 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 40V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 120A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.8 mOhm @ 25A, 10V |
Vgs (th) (Max) @ Id | 4V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 145nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 11340pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 349W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | I2PAK |
Paket / fall | TO-262-3 Long Leads, I²Pak, TO-262AA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BUK7E1R8-40E,127 Gewicht | kontaktiere uns |
Ersatzteilnummer | BUK7E1R8-40E,127-FT |
5HN01SS-TL-E
ON Semiconductor
5HN01SS-TL-H
ON Semiconductor
BST72A,112
NXP USA Inc.
PHW80NQ10T,127
NXP USA Inc.
PSMN004-55W,127
NXP USA Inc.
PSMN009-100W,127
NXP USA Inc.
PSMN020-150W,127
NXP USA Inc.
PSMN040-200W,127
NXP USA Inc.
BUK7905-40AIE,127
Nexperia USA Inc.
BUK7905-40AI,127
Nexperia USA Inc.
XCV50-6TQ144C
Xilinx Inc.
LCMXO2-256HC-4SG32C
Lattice Semiconductor Corporation
LFE5UM-45F-8BG554C
Lattice Semiconductor Corporation
M1AGL250V5-VQ100
Microsemi Corporation
EPF10K100ABC600-1
Intel
5SGXMA5K1F40C2LN
Intel
XC4013E-2HQ208I
Xilinx Inc.
XC2VP2-6FF672I
Xilinx Inc.
XC6SLX9-L1CPG196C
Xilinx Inc.
M1AGL1000V2-FGG144I
Microsemi Corporation