Zuhause / Produkte / Diskrete Halbleiterprodukte / Dioden - Zener - Single / BZD27C82P-HE3-18
Herstellerteilenummer | BZD27C82P-HE3-18 |
---|---|
Zukünftige Teilenummer | FT-BZD27C82P-HE3-18 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101, BZD27C |
BZD27C82P-HE3-18 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Spannung - Zener (Nom) (Vz) | 82V |
Toleranz | - |
Leistung max | 800mW |
Impedanz (max.) (Zzt) | 100 Ohms |
Strom - Rückwärtsleckage @ Vr | 1µA @ 62V |
Spannung - Vorwärts (Vf) (Max) @ If | 1.2V @ 200mA |
Betriebstemperatur | -65°C ~ 175°C |
Befestigungsart | Surface Mount |
Paket / fall | DO-219AB |
Supplier Device Package | DO-219AB (SMF) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
BZD27C82P-HE3-18 Gewicht | kontaktiere uns |
Ersatzteilnummer | BZD27C82P-HE3-18-FT |
BZD27C30P-HE3-18
Vishay Semiconductor Diodes Division
BZD27C30P-M3-08
Vishay Semiconductor Diodes Division
BZD27C30P-M3-18
Vishay Semiconductor Diodes Division
BZD27C33P-E3-18
Vishay Semiconductor Diodes Division
BZD27C33P-HE3-18
Vishay Semiconductor Diodes Division
BZD27C33P-M3-08
Vishay Semiconductor Diodes Division
BZD27C33P-M3-18
Vishay Semiconductor Diodes Division
BZD27C36P-E3-08
Vishay Semiconductor Diodes Division
BZD27C36P-E3-18
Vishay Semiconductor Diodes Division
BZD27C36P-HE3-18
Vishay Semiconductor Diodes Division
LCMXO2-256ZE-1TG100C
Lattice Semiconductor Corporation
LCMXO2-2000HC-5TG100C
Lattice Semiconductor Corporation
XC4036XL-3HQ304I
Xilinx Inc.
XC7S100-L1FGGA484I
Xilinx Inc.
M1A3P600-2FG484I
Microsemi Corporation
M2GL025-1VFG400
Microsemi Corporation
XA6SLX16-3CSG225Q
Xilinx Inc.
AGLP125V2-CSG289I
Microsemi Corporation
LFE2-20SE-5F484I
Lattice Semiconductor Corporation
5SGSMD4H1F35I2N
Intel