Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / C3M0075120J
Herstellerteilenummer | C3M0075120J |
---|---|
Zukünftige Teilenummer | FT-C3M0075120J |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | C3M™ |
C3M0075120J Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | SiCFET (Silicon Carbide) |
Drain-Source-Spannung (Vdss) | 1200V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 30A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 15V |
Rds On (Max) @ Id, Vgs | 90 mOhm @ 20A, 15V |
Vgs (th) (Max) @ Id | 4V @ 5mA |
Gateladung (Qg) (Max) @ Vgs | 51nC @ 15V |
Vgs (Max) | +19V, -8V |
Eingangskapazität (Ciss) (Max) @ Vds | 1350pF @ 1000V |
FET-Funktion | - |
Verlustleistung (max.) | 113.6W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | D2PAK-7 |
Paket / fall | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
C3M0075120J Gewicht | kontaktiere uns |
Ersatzteilnummer | C3M0075120J-FT |
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