Herstellerteilenummer | DF10M |
---|---|
Zukünftige Teilenummer | FT-DF10M |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
DF10M Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Diodentyp | Single Phase |
Technologie | Standard |
Spannung - Peak Reverse (Max) | 1kV |
Strom - Durchschnitt gleichgerichtet (Io) | 1A |
Spannung - Vorwärts (Vf) (Max) @ If | 1.1V @ 1A |
Strom - Rückwärtsleckage @ Vr | 10µA @ 1000V |
Betriebstemperatur | -65°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Paket / fall | 4-EDIP (0.300", 7.62mm) |
Supplier Device Package | DFM |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
DF10M Gewicht | kontaktiere uns |
Ersatzteilnummer | DF10M-FT |
GBU1010
Diodes Incorporated
GBU6005
Diodes Incorporated
GBJ1504-F
Diodes Incorporated
GBJ2506-F
Diodes Incorporated
GBJ2006-F
Diodes Incorporated
GBJ810-F
Diodes Incorporated
GBJ802-F
Diodes Incorporated
GBJ1002-F
Diodes Incorporated
GBJ601-F
Diodes Incorporated
GBJ1001-F
Diodes Incorporated
ICE5LP4K-SG48ITR50
Lattice Semiconductor Corporation
XC2S100E-6FTG256C
Xilinx Inc.
XC7K70T-1FBG676C
Xilinx Inc.
LCMXO2-256HC-6SG32C
Lattice Semiconductor Corporation
10CL016YU256C6G
Intel
EP4CGX15BF14I7
Intel
EP3SL200F1152I4
Intel
XC2V3000-5BG728I
Xilinx Inc.
XC6VLX195T-1FFG1156C
Xilinx Inc.
EP20K200CB356C8
Intel