Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / DMG3N60SJ3
Herstellerteilenummer | DMG3N60SJ3 |
---|---|
Zukünftige Teilenummer | FT-DMG3N60SJ3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101 |
DMG3N60SJ3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 650V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 2.8A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.5 Ohm @ 1.5A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 12.6nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 354pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 41W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-251 |
Paket / fall | TO-251-3, IPak, Short Leads |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
DMG3N60SJ3 Gewicht | kontaktiere uns |
Ersatzteilnummer | DMG3N60SJ3-FT |
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