Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / DMN1019USN-7
Herstellerteilenummer | DMN1019USN-7 |
---|---|
Zukünftige Teilenummer | FT-DMN1019USN-7 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
DMN1019USN-7 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 12V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 9.3A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 1.2V, 2.5V |
Rds On (Max) @ Id, Vgs | 10 mOhm @ 9.7A, 4.5V |
Vgs (th) (Max) @ Id | 800mV @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 50.6nC @ 8V |
Vgs (Max) | ±8V |
Eingangskapazität (Ciss) (Max) @ Vds | 2426pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 680mW (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | SC-59 |
Paket / fall | TO-236-3, SC-59, SOT-23-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
DMN1019USN-7 Gewicht | kontaktiere uns |
Ersatzteilnummer | DMN1019USN-7-FT |
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