Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / DMN21D2UFB-7B
Herstellerteilenummer | DMN21D2UFB-7B |
---|---|
Zukünftige Teilenummer | FT-DMN21D2UFB-7B |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
DMN21D2UFB-7B Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 760mA (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 990 mOhm @ 100mA, 4.5V |
Vgs (th) (Max) @ Id | 1V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 0.93nC @ 10V |
Vgs (Max) | ±12V |
Eingangskapazität (Ciss) (Max) @ Vds | 27.6pF @ 16V |
FET-Funktion | - |
Verlustleistung (max.) | 380mW (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 3-DFN1006 (1.0x0.6) |
Paket / fall | 3-UFDFN |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
DMN21D2UFB-7B Gewicht | kontaktiere uns |
Ersatzteilnummer | DMN21D2UFB-7B-FT |
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